Active IrO2 and NiO thin films prepared by atomic layer deposition for oxygen evolution reaction

D. J.Donn Matienzo, Daniel Settipani, Emanuele Instuli, Tanja Kallio

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

5 Sitaatiot (Scopus)
48 Lataukset (Pure)


Atomic layer deposition (ALD) is a special type of chemical vapor deposition (CVD) technique that can grow uniformed thin films on a substrate through alternate self-limiting surface reactions. Recently, the application of these thin film materials to catalytic systems has begun to attract much attention, and the capacity to deposit these catalytic films in a highly controlled manner continues to gain importance. In this study, IrO2 and NiO thin films (approximately 25 to 60 nm) were deposited on industrial Ni expanded mesh as an anode for alkaline water electrolysis. Different ALD operating parameters such as the total number of deposition cycles, sublimation and deposition temperatures, and precursors pulse and purge lengths were varied to determine their effects on the structure and the electrochemical performance of the thin film materials. Results from the electrochemical tests (6 M KOH, 80C, up to 10 kA/m2) showed the catalytic activity of the samples. Oxygen overpotential values (ηO2) were 20 to 60 mV lower than the bare Ni expanded mesh. In summary, the study has demonstrated the feasibility of using the ALD technique to deposit uniformed and electroactive thin films on industrial metallic substrates as anodes for alkaline water electrolysis.

DOI - pysyväislinkit
TilaJulkaistu - 1 tammikuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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