A Temperature Sensor with 3 sigma Inaccuracy of+0.5/-0.75 degrees C and Energy per Conversion of 0.65 mu J Using a 0.18 mu m CMOS Technology

Mikail Yucetas*, Mika Pulkkinen, Jakub Gronicz, Kari Halonen

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu

Abstrakti

We present an integrated temperature sensor, which utilises bipolar transistors present in a 0.18 mu m CMOS process. A bipolar transistor is biased with two different current densities consecutively to have a voltage proportional to absolute temperature (PTAT). Two such bipolars are used to achieve a differential signal. The differential PTAT signal is fed to an incremental Delta Sigma. ADC to have temperature information in digital domain, which is then processed with an on-chip DSP block. The whole sensor can he put into power down mode after a conversion is done. The sensor operates in the temperature range from -40 degrees C to +85 degrees C. The energy per conversion is 0.65 mu J when the sensor output rate is at 3 conversions/s. The inaccuracy of the sensor is +0.51-0.75 degrees C (3 sigma) after three point fitting.

AlkuperäiskieliEnglanti
Otsikko2013 NORCHIP
KustantajaIEEE
Sivumäärä4
TilaJulkaistu - 2013
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaNORCHIP Conference - Vilnius, Liettua
Kesto: 11 marrask. 201312 marrask. 2013

Conference

ConferenceNORCHIP Conference
Maa/AlueLiettua
KaupunkiVilnius
Ajanjakso11/11/201312/11/2013

Sormenjälki

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