A technique for large-area position-controlled growth of GaAs nanowire arrays

Tutkimustuotos: Lehtiartikkeli

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@article{4b92eac632fb41758b38e8194fbac80e,
title = "A technique for large-area position-controlled growth of GaAs nanowire arrays",
abstract = "We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.",
keywords = "azopolymer, GaAs, laser interference, lithography, MOVPE, nanowires, vapour-liquid-solid",
author = "Christoffer Kauppinen and Tuomas Haggren and Aleksandr Kravchenko and Hua Jiang and Teppo Huhtio and Esko Kauppinen and Veer Dhaka and Sami Suihkonen and Matti Kaivola and Harri Lipsanen and Markku Sopanen",
year = "2016",
month = "2",
day = "22",
doi = "10.1088/0957-4484/27/13/135601",
language = "English",
volume = "27",
journal = "Nanotechnology",
issn = "0957-4484",
number = "13",

}

RIS - Lataa

TY - JOUR

T1 - A technique for large-area position-controlled growth of GaAs nanowire arrays

AU - Kauppinen, Christoffer

AU - Haggren, Tuomas

AU - Kravchenko, Aleksandr

AU - Jiang, Hua

AU - Huhtio, Teppo

AU - Kauppinen, Esko

AU - Dhaka, Veer

AU - Suihkonen, Sami

AU - Kaivola, Matti

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 2016/2/22

Y1 - 2016/2/22

N2 - We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.

AB - We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.

KW - azopolymer

KW - GaAs

KW - laser interference

KW - lithography

KW - MOVPE

KW - nanowires

KW - vapour-liquid-solid

UR - http://www.scopus.com/inward/record.url?scp=84959211236&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/27/13/135601

DO - 10.1088/0957-4484/27/13/135601

M3 - Article

VL - 27

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 13

M1 - 135601

ER -

ID: 1684712