A study of semi-insulating gallium arsenide wafers by x-ray methods

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Alkuperäiskieli	Englanti
Julkaisupaikka	Espoo
Sivut	37-39
Tila	Julkaistu - 1992
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	Optoelectronics Laboratory, Helsinki University of Technology
Numero	TKK-F-C139

Tutkimusalat

@techreport{f9bafd0a2802449dad6338fa52c26fc6,

title = "A study of semi-insulating gallium arsenide wafers by x-ray methods",

keywords = "GaAs, synchrotron X-ray topography, GaAs, synchrotron X-ray topography, GaAs, synchrotron X-ray topography",

author = "E. Prieur",

year = "1992",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C139",

pages = "37--39",

type = "WorkingPaper",

}

TY - UNPB

T1 - A study of semi-insulating gallium arsenide wafers by x-ray methods

AU - Prieur, E.

PY - 1992

Y1 - 1992

KW - GaAs

KW - synchrotron X-ray topography

KW - GaAs

KW - synchrotron X-ray topography

KW - GaAs

KW - synchrotron X-ray topography

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 37

EP - 39

BT - A study of semi-insulating gallium arsenide wafers by x-ray methods

CY - Espoo

ER -