A single-chip, multimode receiver for GSM900, DCS1800, PCS1900, and UTRA/FDD WCDMA is introduced in this paper. The receiver operates at four different radio frequencies with two different baseband bandwidths. The presented chip uses a direct-conversion architecture and consists of a low-noise amplifier (LNA), downconversion mixers with on-chip local-oscillator I/Q generation, channel selection filters, and programmable gain amplifiers. In spite of four receive bands, only four on-chip inductors are used in the single-ended LNA. The repeatable receiver second-order input intercept point (IIP2) of over +42 dBm is achieved with mixer linearization circuitry together with a baseband circuitry having approximately +100-dBV out-of-band IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8 dB in all GSM modes, and 3.5 dB in WCDMA. The power consumption from a 2.7-V supply in all GSM modes and in WCDMA mode is 42 and 50 mW, respectively. The silicon area is 9.8 mm2 including the bonding pads.