A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Hui Xue; Yadong Wang; Yunyun Dai; Wonjae Kim; Henri Jussila; Mei Qi; Jannatul Susoma; Zhaoyu Ren; Qing Dai; Jianlin Zhao; Kari Halonen; Harri Lipsanen; Xiaomu Wang; Xuetao Gan; Zhipei Sun

doi:10.1002/adfm.201804388

A MoSe₂/WSe₂ Heterojunction-Based Photodetector at Telecommunication Wavelengths

Hui Xue^*, Yadong Wang, Yunyun Dai, Wonjae Kim, Henri Jussila, Mei Qi, Jannatul Susoma, Zhaoyu Ren, Qing Dai, Jianlin Zhao, Kari Halonen, Harri Lipsanen, Xiaomu Wang, Xuetao Gan, Zhipei Sun

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Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

117 Sitaatiot (Scopus)

551 Lataukset (Pure)

Abstrakti

van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe₂/WSe₂ vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W⁻¹ and 1.9 × 10⁴ mW⁻¹, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

Alkuperäiskieli	Englanti
Artikkeli	1804388
Julkaisu	Advanced Functional Materials
Vuosikerta	28
Numero	47
Varhainen verkossa julkaisun päivämäärä	1 tammik. 2018
DOI - pysyväislinkit	https://doi.org/10.1002/adfm.201804388
Tila	Julkaistu - 21 marrask. 2018
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Pääsy asiakirjaan

10.1002/adfm.201804388

ELEC-xue-et-al-mose-wileyAccepted author manuscript, 1,02 MB

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Link to publication in Scopus

Kvanttiteknologian huippuyksikkö
Sun, Z. (Vastuullinen tutkija), Cui, X. (Projektin jäsen), Bai, X. (Projektin jäsen), Du, L. (Projektin jäsen), Wang, Y. (Projektin jäsen) & Turunen, M. (Projektin jäsen)
01/01/2018 → 31/12/2020
Projekti: Academy of Finland: Other research funding
2D materiaalit THz spektroskopiassa ja kuvantamisessa
Sun, Z. (Vastuullinen tutkija), Generalov, A. (Projektin jäsen), Hulkko, E. (Projektin jäsen), Mohsen, A. (Projektin jäsen), Uddin, M. (Projektin jäsen) & Das, S. (Projektin jäsen)
01/01/2018 → 31/12/2021
Projekti: Academy of Finland: Other research funding
Grafeeniin perustuvat ultranopeat laserit
Sun, Z. (Vastuullinen tutkija), Yang, H. (Projektin jäsen), Das, S. (Projektin jäsen), Xue, H. (Projektin jäsen), Autere, A. (Projektin jäsen), Generalov, A. (Projektin jäsen) & Du, M. (Projektin jäsen)
01/09/2017 → 31/08/2019
Projekti: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
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Repo, P. (Manager) & Rissanen, A. (Other)
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@article{a5664f83a243454db66f4f704a50ebac,

title = "A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths",

abstract = "van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.",

keywords = "MoSe, photodetectors, sub-bandgap photodetection, van der Waals heterojunction, WSe",

author = "Hui Xue and Yadong Wang and Yunyun Dai and Wonjae Kim and Henri Jussila and Mei Qi and Jannatul Susoma and Zhaoyu Ren and Qing Dai and Jianlin Zhao and Kari Halonen and Harri Lipsanen and Xiaomu Wang and Xuetao Gan and Zhipei Sun",

year = "2018",

month = nov,

day = "21",

doi = "10.1002/adfm.201804388",

language = "English",

volume = "28",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "Wiley",

number = "47",

}

TY - JOUR

T1 - A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

AU - Xue, Hui

AU - Wang, Yadong

AU - Dai, Yunyun

AU - Kim, Wonjae

AU - Jussila, Henri

AU - Qi, Mei

AU - Susoma, Jannatul

AU - Ren, Zhaoyu

AU - Dai, Qing

AU - Zhao, Jianlin

AU - Halonen, Kari

AU - Lipsanen, Harri

AU - Wang, Xiaomu

AU - Gan, Xuetao

AU - Sun, Zhipei

PY - 2018/11/21

Y1 - 2018/11/21

N2 - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

AB - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

KW - MoSe

KW - photodetectors

KW - sub-bandgap photodetection

KW - van der Waals heterojunction

KW - WSe

UR - http://www.scopus.com/inward/record.url?scp=85054586217&partnerID=8YFLogxK

U2 - 10.1002/adfm.201804388

DO - 10.1002/adfm.201804388

M3 - Article

AN - SCOPUS:85054586217

SN - 1616-301X

VL - 28

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 47

M1 - 1804388

ER -

A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Abstrakti

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

Kvanttiteknologian huippuyksikkö

2D materiaalit THz spektroskopiassa ja kuvantamisessa

Grafeeniin perustuvat ultranopeat laserit

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä

A MoSe₂/WSe₂ Heterojunction-Based Photodetector at Telecommunication Wavelengths