A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia; Ritam Sarkar; Shivam Singh; Swarup Deb; Sami Suihkonen; Jori Lemettinen; Subhabrata Dhar; Dinesh Kabra; Apurba Laha

doi:10.1109/TED.2021.3073650

A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha^*

^*Tämän työn vastaava kirjoittaja

Indian Institute of Technology Bombay

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

20 Sitaatiot (Scopus)

Abstrakti

In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

Alkuperäiskieli	Englanti
Artikkeli	9423875
Sivut	2796-2803
Sivumäärä	8
Julkaisu	IEEE Transactions on Electron Devices
Vuosikerta	68
Numero	6
DOI - pysyväislinkit	https://doi.org/10.1109/TED.2021.3073650
Tila	Julkaistu - kesäk. 2021
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

The authors would like to thank the Department of Science and Technology (DST), Government of India, and the international collaboration. A part of the research was performed at the OtaNano–Micronova Nanofabrication Centre, Aalto University. Manuscript received December 30, 2020; revised March 19, 2021; accepted April 6, 2021. Date of publication May 5, 2021; date of current version May 21, 2021. This work was supported by the Academy of Finland under Grant 327331. The work of Ravindra Singh Pokharia was supported by the Ministry of Electronics and Information Technology, Government of India. The work of Apurba Laha was supported in part by the Ministry of Electronics and Information Technology, Government of India and in part by the Ministry of Education, Government of India, under the scheme of “Scheme for Transformational and Advanced Research in Sciences (STARS),” under Project 421. The review of this article was arranged by Editor J. Huang. (Corresponding author: Apurba Laha.) Ravindra Singh Pokharia, Ritam Sarkar, and Apurba Laha are with the Electrical Engineering Department, IIT Bombay, Mumbai 400076, India (e-mail: [email protected]; [email protected]; [email protected]).

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10.1109/TED.2021.3073650

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Typpi-polaareihin nitridimateriaaleihin pohjautuvat korkean hyötysuhteen tehokomponentit
Suihkonen, S. (Vastuullinen johtaja) & Kim, I. (Projektin jäsen)
01/09/2019 → 31/08/2021
Projekti: Academy of Finland: Other research funding

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@article{6c07fc22db9c4f78ac464a7d3c6ad450,

title = "A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer",

abstract = "In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm \$\{ < \}\{E\} < 10\$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of \$4.6\textbackslash{}times 10\textasciicircum{}\{12\}\$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications. ",

keywords = "Dark current analysis, gallium nitride (GaN) on Si, Poole-Frenkel (PF), responsivity, thermionic field emission (TFE), ultraviolet (UV) photodetectors (PDs)",

author = "Pokharia, \{Ravindra Singh\} and Ritam Sarkar and Shivam Singh and Swarup Deb and Sami Suihkonen and Jori Lemettinen and Subhabrata Dhar and Dinesh Kabra and Apurba Laha",

note = "Funding Information: The authors would like to thank the Department of Science and Technology (DST), Government of India, and the international collaboration. A part of the research was performed at the OtaNano–Micronova Nanofabrication Centre, Aalto University. Funding Information: Manuscript received December 30, 2020; revised March 19, 2021; accepted April 6, 2021. Date of publication May 5, 2021; date of current version May 21, 2021. This work was supported by the Academy of Finland under Grant 327331. The work of Ravindra Singh Pokharia was supported by the Ministry of Electronics and Information Technology, Government of India. The work of Apurba Laha was supported in part by the Ministry of Electronics and Information Technology, Government of India and in part by the Ministry of Education, Government of India, under the scheme of “Scheme for Transformational and Advanced Research in Sciences (STARS),” under Project 421. The review of this article was arranged by Editor J. Huang. (Corresponding author: Apurba Laha.) Ravindra Singh Pokharia, Ritam Sarkar, and Apurba Laha are with the Electrical Engineering Department, IIT Bombay, Mumbai 400076, India (e-mail: [email protected]; [email protected]; [email protected]). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = jun,

doi = "10.1109/TED.2021.3073650",

language = "English",

volume = "68",

pages = "2796--2803",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

AU - Pokharia, Ravindra Singh

AU - Sarkar, Ritam

AU - Singh, Shivam

AU - Deb, Swarup

AU - Suihkonen, Sami

AU - Lemettinen, Jori

AU - Dhar, Subhabrata

AU - Kabra, Dinesh

AU - Laha, Apurba

N1 - Funding Information: The authors would like to thank the Department of Science and Technology (DST), Government of India, and the international collaboration. A part of the research was performed at the OtaNano–Micronova Nanofabrication Centre, Aalto University. Funding Information: Manuscript received December 30, 2020; revised March 19, 2021; accepted April 6, 2021. Date of publication May 5, 2021; date of current version May 21, 2021. This work was supported by the Academy of Finland under Grant 327331. The work of Ravindra Singh Pokharia was supported by the Ministry of Electronics and Information Technology, Government of India. The work of Apurba Laha was supported in part by the Ministry of Electronics and Information Technology, Government of India and in part by the Ministry of Education, Government of India, under the scheme of “Scheme for Transformational and Advanced Research in Sciences (STARS),” under Project 421. The review of this article was arranged by Editor J. Huang. (Corresponding author: Apurba Laha.) Ravindra Singh Pokharia, Ritam Sarkar, and Apurba Laha are with the Electrical Engineering Department, IIT Bombay, Mumbai 400076, India (e-mail: [email protected]; [email protected]; [email protected]). Publisher Copyright: © 1963-2012 IEEE.

PY - 2021/6

Y1 - 2021/6

N2 - In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

AB - In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

KW - Dark current analysis

KW - gallium nitride (GaN) on Si

KW - Poole-Frenkel (PF)

KW - responsivity

KW - thermionic field emission (TFE)

KW - ultraviolet (UV) photodetectors (PDs)

UR - https://www.scopus.com/pages/publications/85105558167

U2 - 10.1109/TED.2021.3073650

DO - 10.1109/TED.2021.3073650

M3 - Article

AN - SCOPUS:85105558167

SN - 0018-9383

VL - 68

SP - 2796

EP - 2803

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 9423875

ER -

A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

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