TY - JOUR
T1 - A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
AU - Pokharia, Ravindra Singh
AU - Sarkar, Ritam
AU - Singh, Shivam
AU - Deb, Swarup
AU - Suihkonen, Sami
AU - Lemettinen, Jori
AU - Dhar, Subhabrata
AU - Kabra, Dinesh
AU - Laha, Apurba
N1 - Funding Information:
The authors would like to thank the Department of Science and Technology (DST), Government of India, and the international collaboration. A part of the research was performed at the OtaNano–Micronova Nanofabrication Centre, Aalto University.
Funding Information:
Manuscript received December 30, 2020; revised March 19, 2021; accepted April 6, 2021. Date of publication May 5, 2021; date of current version May 21, 2021. This work was supported by the Academy of Finland under Grant 327331. The work of Ravindra Singh Pokharia was supported by the Ministry of Electronics and Information Technology, Government of India. The work of Apurba Laha was supported in part by the Ministry of Electronics and Information Technology, Government of India and in part by the Ministry of Education, Government of India, under the scheme of “Scheme for Transformational and Advanced Research in Sciences (STARS),” under Project 421. The review of this article was arranged by Editor J. Huang. (Corresponding author: Apurba Laha.) Ravindra Singh Pokharia, Ritam Sarkar, and Apurba Laha are with the Electrical Engineering Department, IIT Bombay, Mumbai 400076, India (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2021/6
Y1 - 2021/6
N2 - In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.
AB - In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.
KW - Dark current analysis
KW - gallium nitride (GaN) on Si
KW - Poole-Frenkel (PF)
KW - responsivity
KW - thermionic field emission (TFE)
KW - ultraviolet (UV) photodetectors (PDs)
UR - http://www.scopus.com/inward/record.url?scp=85105558167&partnerID=8YFLogxK
U2 - 10.1109/TED.2021.3073650
DO - 10.1109/TED.2021.3073650
M3 - Article
AN - SCOPUS:85105558167
SN - 0018-9383
VL - 68
SP - 2796
EP - 2803
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
M1 - 9423875
ER -