A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer

Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha*

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

Abstrakti

In this work, we demonstrate the potential of a gallium nitride (GaN)-based visible-blind ultraviolet (UV) photodetector (PD) on a commercially viable 150-mm Si wafer. The influence of thermionic field emission (TFE) and Poole-Frenkel (PF) mechanisms on the current transport of the PD has been analyzed. Conduction due to the TFE mechanism dominates in the moderate electric fields (1.25 kV/cm ${ < }{E} < 10$ kV/cm), while the influence of PF is prominent at higher electric fields. A bulk trap energy level of 0.374 eV is obtained with PF conduction analysis. A high responsivity of 33.3 A/W at 15 V with a 362-nm incident wavelength has been achieved in the presence of an internal gain. The internal gain of the PD is also assisted by TFE and PF mechanisms. The PD exhibits a low dark current of 4.7 nA as well as high detectivity of $4.6\times 10^{12}$ Jones at the abovementioned bias. The demonstrated robustness and high performance show the promise of III-nitride PDs for commercial applications.

AlkuperäiskieliEnglanti
Artikkeli9423875
Sivut2796-2803
Sivumäärä8
JulkaisuIEEE Transactions on Electron Devices
Vuosikerta68
Numero6
DOI - pysyväislinkit
TilaJulkaistu - kesäkuuta 2021
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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