A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

T. C. Dos Santos; J. A.C. Gonçalves; M. M. Vasques; C. C.B. Tobias; W. F.P. Neves; C. M.K. Haddad; Jaakko Härkönen

doi:10.1063/1.3608963

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

T. C. Dos Santos
, J. A.C. Gonçalves
, M. M. Vasques^*
, C. C.B. Tobias
, W. F.P. Neves
, C. M.K. Haddad
, Jaakko Härkönen

^*Tämän työn vastaava kirjoittaja

Teknillisen fysiikan laitos

Comissão Nacional de Energia Nuclear
Pontifícia Universidade Católica de São Paulo
Hospital Sirio-Libanes
Aalto University

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

Alkuperäiskieli	Englanti
Otsikko	XXXIII Brazilian Workshop on Nuclear Physics
Sivut	228-232
Sivumäärä	5
Vuosikerta	1351
DOI - pysyväislinkit	https://doi.org/10.1063/1.3608963
Tila	Julkaistu - 2011
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Brazilian Workshop on Nuclear Physics - Campos Do Jordao, Brasilia Kesto: 7 syysk. 2010 → 11 syysk. 2010 Konferenssinumero: 33

Workshop

Workshop	Brazilian Workshop on Nuclear Physics
Maa/Alue	Brasilia
Kaupunki	Campos Do Jordao
Ajanjakso	07/09/2010 → 11/09/2010

Pääsy asiakirjaan

10.1063/1.3608963

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

Dos Santos, T. C., Gonçalves, J. A. C., Vasques, M. M., Tobias, C. C. B., Neves, W. F. P., Haddad, C. M. K., & Härkönen, J. (2011). A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. teoksessa XXXIII Brazilian Workshop on Nuclear Physics (Vuosikerta 1351, Sivut 228-232) https://doi.org/10.1063/1.3608963

@inproceedings{06d8e5ea63a5440ea8ac6a0c53b46b1c,

title = "A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry",

abstract = "In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8\% and 2.5\% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.",

keywords = "dosimetry, electron beam, silicon diodes",

author = "\{Dos Santos\}, \{T. C.\} and Gon{\c c}alves, \{J. A.C.\} and Vasques, \{M. M.\} and Tobias, \{C. C.B.\} and Neves, \{W. F.P.\} and Haddad, \{C. M.K.\} and Jaakko H{\"a}rk{\"o}nen",

year = "2011",

doi = "10.1063/1.3608963",

language = "English",

isbn = "9780735409088",

volume = "1351",

pages = "228--232",

booktitle = "XXXIII Brazilian Workshop on Nuclear Physics",

note = "Brazilian Workshop on Nuclear Physics ; Conference date: 07-09-2010 Through 11-09-2010",

}

Dos Santos, TC, Gonçalves, JAC, Vasques, MM, Tobias, CCB, Neves, WFP, Haddad, CMK & Härkönen, J 2011, A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. julkaisussa XXXIII Brazilian Workshop on Nuclear Physics. Vuosikerta 1351, Sivut 228-232, Brazilian Workshop on Nuclear Physics, Campos Do Jordao, Brasilia, 07/09/2010. https://doi.org/10.1063/1.3608963

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. / Dos Santos, T. C.; Gonçalves, J. A.C.; Vasques, M. M. et al.
XXXIII Brazilian Workshop on Nuclear Physics. Vuosikerta 1351 2011. s. 228-232.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

AU - Dos Santos, T. C.

AU - Gonçalves, J. A.C.

AU - Vasques, M. M.

AU - Tobias, C. C.B.

AU - Neves, W. F.P.

AU - Haddad, C. M.K.

AU - Härkönen, Jaakko

N1 - Conference code: 33

PY - 2011

Y1 - 2011

N2 - In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

AB - In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

KW - dosimetry

KW - electron beam

KW - silicon diodes

UR - https://www.scopus.com/pages/publications/80052416930

U2 - 10.1063/1.3608963

DO - 10.1063/1.3608963

M3 - Conference article in proceedings

AN - SCOPUS:80052416930

SN - 9780735409088

VL - 1351

SP - 228

EP - 232

BT - XXXIII Brazilian Workshop on Nuclear Physics

T2 - Brazilian Workshop on Nuclear Physics

Y2 - 7 September 2010 through 11 September 2010

ER -

A comparison between rad-hard standard Float Zone (FZ) and Magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

Abstrakti

Workshop

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