A 53-117 GHz LNA in 28-nm FDSOI CMOS

Denizhan Karaca; Mikko Varonen; Dristy Parveg; Ali Vahdati; Kari A I Halonen

doi:10.1109/LMWC.2016.2646912

A 53-117 GHz LNA in 28-nm FDSOI CMOS

Denizhan Karaca, Mikko Varonen, Dristy Parveg, Ali Vahdati, Kari A I Halonen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

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This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

Alkuperäiskieli	Englanti
Artikkeli	7837635
Sivut	171-173
Sivumäärä	3
Julkaisu	IEEE Microwave and Wireless Components Letters
Vuosikerta	27
Numero	2
DOI - pysyväislinkit	https://doi.org/10.1109/LMWC.2016.2646912
Tila	Julkaistu - 1 helmik. 2017
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1109/LMWC.2016.2646912

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title = "A 53-117 GHz LNA in 28-nm FDSOI CMOS",

abstract = "This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.",

keywords = "Amplifier, broadband amplifiers, CMOS, LNA, millimeter-wave integrated circuits, W-band",

author = "Denizhan Karaca and Mikko Varonen and Dristy Parveg and Ali Vahdati and Halonen, {Kari A I}",

year = "2017",

month = feb,

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doi = "10.1109/LMWC.2016.2646912",

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T1 - A 53-117 GHz LNA in 28-nm FDSOI CMOS

AU - Karaca, Denizhan

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Vahdati, Ali

AU - Halonen, Kari A I

PY - 2017/2/1

Y1 - 2017/2/1

N2 - This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

AB - This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

KW - Amplifier

KW - broadband amplifiers

KW - CMOS

KW - LNA

KW - millimeter-wave integrated circuits

KW - W-band

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U2 - 10.1109/LMWC.2016.2646912

DO - 10.1109/LMWC.2016.2646912

M3 - Article

AN - SCOPUS:85011659335

VL - 27

SP - 171

EP - 173

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 2

M1 - 7837635

ER -

A 53-117 GHz LNA in 28-nm FDSOI CMOS

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