In this work, a low-power voltage reference circuit has been developed using the principle that a thermal compensation of the threshold voltage of a diode-connected nMOSFET can be obtained by using the PTAT current. The proposed circuit is designed using 0.18μm standard CMOS technology for the industrial temperature range of - 40 to +85∘C. The measurements have been done over a set of 10 samples in the given temperature range. The measured results show that the proposed circuit is capable of working in the supply voltage range of 1.2–1.8 V with the mean line sensitivity and total current consumption of 0.64%/V and 115.4nA, respectively, at 22.5∘C. The measured mean reference voltage obtained from the circuit is 435 mV with the mean temperature coefficient of 67ppm/∘C. The measured noise density at 22.5∘C without any filtering capacitor is 42μV/Hz at 100 Hz. The active area of the circuit is 0.01008mm2.
|Julkaisu||Circuits, Systems, and Signal Processing|
|DOI - pysyväislinkit|
|Tila||Julkaistu - 1 jouluk. 2017|
|OKM-julkaisutyyppi||A1 Julkaistu artikkeli, soviteltu|