TY - JOUR
T1 - A 0.67-μW 177-ppm/°C All-MOS Current Reference Circuit in a 0.18-μm CMOS Technology
AU - Chouhan, Shailesh Singh
AU - Halonen, Kari
PY - 2016/8/1
Y1 - 2016/8/1
N2 - This brief describes a nanopower current reference circuit that has been fabricated in a standard 0.18- μm CMOS technology. The proposed circuit is an extension of the resistorless current reference circuit suggested by Oguey and Aebischer. This extension is a simple circuit arrangement that is capable of reducing the temperature coefficient (TC) of Oguey's circuit. The measurements have been done on ten prototypes in the temperature range of -40 °C to +85 °C. The measured average reference current is 92.2 nA with the average TC value of 177 ppm/°C. The measured average reduction of ≈68% has been achieved in TC value of Oguey's circuit after implementing the proposed arrangement. The operating supply voltage for the proposed circuit ranges from 1.25 to 1.8 V with the line sensitivity of 7.5%/V. The measured maximum average power dissipation of the proposed current reference circuit is 0.67 μW at the supply voltage of 1.8 V.
AB - This brief describes a nanopower current reference circuit that has been fabricated in a standard 0.18- μm CMOS technology. The proposed circuit is an extension of the resistorless current reference circuit suggested by Oguey and Aebischer. This extension is a simple circuit arrangement that is capable of reducing the temperature coefficient (TC) of Oguey's circuit. The measurements have been done on ten prototypes in the temperature range of -40 °C to +85 °C. The measured average reference current is 92.2 nA with the average TC value of 177 ppm/°C. The measured average reduction of ≈68% has been achieved in TC value of Oguey's circuit after implementing the proposed arrangement. The operating supply voltage for the proposed circuit ranges from 1.25 to 1.8 V with the line sensitivity of 7.5%/V. The measured maximum average power dissipation of the proposed current reference circuit is 0.67 μW at the supply voltage of 1.8 V.
KW - All-MOS implementation
KW - low power
KW - low temperature coefficient (TC)
KW - low voltage
KW - nanoampere current reference
UR - http://www.scopus.com/inward/record.url?scp=84984869339&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2016.2531158
DO - 10.1109/TCSII.2016.2531158
M3 - Article
AN - SCOPUS:84984869339
VL - 63
SP - 723
EP - 727
JO - IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
JF - IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
SN - 1549-7747
IS - 8
M1 - 7410018
ER -