Tutkimustuotos

Tutkimustuotoksia vuodessa 1992 1993 1994 1995 1996 1997 1998 1999 2003 2004 2005 2006 2007 2010 2011 2012 2013 2020

• 152 Article
• 57 Conference article in proceedings
• 44 Working paper
• 3 Chapter

Tutkimustuotoksia vuodessa

Tutkimustuotoksia vuodessa

Hakutulokset

• 2006

  Effect of growth conditions on electrocal properties of Mg-doped p-GaN

  Svensk, O., Törmä, P., Suihkonen, S., Sopanen, M., Odnoblyudov, M. A. & Bougrov, V. E., 2006, (ISGN Symposium, Linköping, Ruotsi, 2006).

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  28 Sitaatiot (Scopus)

• In-situ composition determination of MOVPE grown InGaAsN quantum wells

  Reentilä, O., Mattila, M., Sopanen, M. & Lipsanen, H., 2006, (3rd Workshop of Metastable Compound Semiconductor Systems and Heterostructures, Marburg, Saksa, 18-20.12.2006).

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• In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

  Reentilä, O., Mattila, M., Knuuttila, L., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2006, (13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japani, 22-26.5.2006).

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• 2005

  Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

  Mattila, M., Sopanen, M. & Lipsanen, H., 2005, s. 118-118, (AIP Conference Proceedings 772).

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• 2003

  YOOPpia ikä kaikki

  Alestalo, P., Belitz, S., Sopanen, M., Tuhkuri, J. & Virtanen, S., 2003, Espoo, s. 6-9, (YOOPpia ikä kaikki, YOOP2001-kurssin oman opetuksen kehittämishankkeet; nro 1/2003).

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• 2002

  Effect of growth conditions on the defect transitions in Ga(In)NAs

  Toivonen, J., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2002, (11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002).

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• Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

  Hakkarainen, T., Toivonen, J., Sopanen, M. & Lipsanen, H., 2002, (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

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  2 Sitaatiot (Scopus)

• In (Ga)As quantum dots on Ge substrate

  Knuuttila, L., Kainu, K., Sopanen, M. & Lipsanen, H., 2002, s. 217-220, (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

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• Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

  Koskenvaara, H., Hakkarainen, T., Lipsanen, H. & Sopanen, M., 2002, s. 227-230, (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

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• Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy

  Toivonen, J., Oila, J., Saarinen, K., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2002, (14th International Conference on Idium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

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• Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

  Hakkarainen, T., Toivonen, J., Sopanen, M. & Lipsanen, H., 2002, (11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002).

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• 2001

  Defects in GaInNAs quantum dot layers

  Tuomi, T., Pohjola, P., Riikonen, J., Knuuttila, L., Sopanen, M., McNally, P. J., Kanatharana, J., Chen, W., Lowney, D. & Danilewsky, A. N., 2001, Hampuri, s. 851-852, (HASYLAB-DESY Annual Report 2000, Part I).

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• Growth and defects of GaAsN layers on GaAs

  Toivonen, J., Tuomi, T., Riikonen, J., Knuuttila, L., Rantamäki, R., Sopanen, M., Lipsanen, H., McNally, P. J., Kanatharana, J., Chen, W. & Lowney, D., 2001, Hampuri, s. 861-862, (HASYLAB-DESY Annual Report 2000, Part I).

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• Growth and optical properties of GaInNAs quantum wells

  Hakkarainen, T., Toivonen, J., Sopanen, M. & Lipsanen, H., 2001, Jyväskylä, s. 121, (XXXV Annual Conference of the Finnish Physical Society, Jyväskylä, Finland, March 22-24,2001).

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• 2000

  High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy

  Toivonen, J., Hakkarainen, T., Sopanen, M. & Lipsanen, H., 2000, Espoo, s. 139, (The XXXXIV Annual Conference of the Finnish Physical Society, Espoo, Finland, March 9-11, 2000).

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• 1997

  Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots

  Jaaniso, R., Lipsanen, H., Reimand, I. & Sopanen, M., 1997, s. 4, (X International Symposium, Ultrafast Phenomena in Spectroscopy, Tartu, Estonia, August 24-28, 1997).

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• Ultrafast relaxation dynamics in strain-induced quantum dots

  Sandmann, J. H. H., Grosse, S., von Plessen, G., Feldman, J., Hayes, G., Phillips, R., Lipsanen, H., Sopanen, M. & Ahopelto, J., 1997, s. 2, (Fifth International Symposium on Optics of Excitons in Confined Systems, Göttingen, Germany, August 1-14,1997).

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• 1996

  Enhanced luminescence of near-surface quantum wells passivated in situ by InP

  Lipsanen, H., Sopanen, M., Taskinen, M., Tulkki, J. & Ahopelto, J., 1996, Scwäbisch Gmund, Germany, (Proceedings of Eight International Conference on Indium Phosphide and Related Materials, Scwäbich Gmund, Germany, 21-25 April 1996).

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• In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

  Lipsanen, H., Sopanen, M., Taskinen, M., Tulkki, J. & Ahopelto, J., 1996, Berlin, Germany, s. 1111-1114, (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996).

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• Mesoscopic Zeeman effect in parabolic quantum dots

  Rinaldi, R., Giugno, P., Cingolani, R., Lipsanen, H., Sopanen, M., Tulkki, J. & Ahopelto, J., 1996, Lago Maggiore, Italy, (15th General Conference of the Condensed Matter Division of EPS, Lago Maggiore, Italy 22-25 April 1996).

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• Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

  Grosse, S., Sandmann, J., von Plessen, G., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J. & Ahopelto, J., 1996, Berlin, Germany, s. 1401-1404, (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996).

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• Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors

  Sopanen, M., Taskinen, M., Lipsanen, H. & Ahopelto, J., 1996, Berlin, Germany, s. 1409-1412, (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996).

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• 1995

  Fabrication, characterization and modelling of stain-induced quantum dots.

  Lipsanen, H., Sopanen, M., Ahopelto, J., Heinämäki, A., Tulkki, J. & Tuomi, T., 1995, Jyväskylä, s. 7.

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• Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.

  Lipsanen, H. & Sopanen, M., 1995, Madrid, Spain, s. s.

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• InGaAs quantum dots induced by self-organized InP stressors.

  Lipsanen, H., Ahopelto, J. & Sopanen, M., 1995, Sapporo, Japan, s. s.

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• Optical properties of self-organized InGaAs/InP dots.

  Lipsanen, H., Ahopelto, J. & Sopanen, M., 1995, Sapporo, Japan, s. s.

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• Recombination processes in strain-induced InGaAs quantum dots.

  Lipsanen, H., Sandman, J., Grosse, S., Feldmann, J., Gobel, E. O., Sopanen, M. & Ahopelto, J., 1995, Cortona, Italy, s. s.

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• Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

  Sopanen, M., Lipsanen, H. & Ahopelto, J., 1995, Forth Myers, Florida, s. s.

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• 1994

  Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

  Xia, Z., Ristolainen, E., Eränen, S., Ronkainen, H., Elliman, R., Sopanen, M. & Tuomi, T., 1994, Espoo, s. 25, (VTT electronics Internal Report).

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• Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

  Koljonen, T., Sopanen, M., Lipsanen, H. & Tuomi, T., 1994, Espoo, s. 15-16, (Optoelectronics Laboratory, Annual Report 1993; nro TKK-F-C160).

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• Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE

  Sopanen, M., Koljonen, T., Lipsanen, H. & Hjelt, K., 1994, Espoo, s. 19-21, (Optoelectronics Laboratory; nro TKK-F-C160).

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• Metallo organic vapour phase epitaxy of III-V semiconductors

  Sopanen, M., Koljonen, T., Lipsanen, H., Taskinen, M. & Tuomi, T., 1994, Helsinki, s. paper 12:16, (Report Series in Physics; nro HU-P-260 (1994)).

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• MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

  Sopanen, M., Lipsanen, H., Koljonen, T., Ahopelto, J. & Taskinen, M., 1994, Espoo, s. 22-24, (Optoelectronics Laboratory, Annual Report 1993; nro TKK-F-C160).

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• MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

  Sopanen, M., Koljonen, T. & Lipsanen, H., 1994, Espoo, s. 25-26, (Optoelectronics Laboratory, Annual Report 1993; nro TKK-F-C160).

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• X-ray diffraction study of GaSb on GaAs grown by MOVPE

  Lipsanen, H., Koljonen, T., Sopanen, M. & Tuomi, T., 1994, Espoo, s. 17-18, (Optoelectronics Laboratory, Annual Report 1993; nro TKK-F-C160).

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• 1993

  Metallo-organic vapor phase system

  Lipsanen, H., Hjelt, K., Koljonen, T., Sopanen, M. & Tuomi, T., 1993, Espoo, s. 12-13, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C148).

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• Photoluminescence spectra of GaSb subtrates and layers

  Hjelt, K., Koljonen, T., Sopanen, M. & Koponen, M., 1993, Espoo, s. 46-49, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C148).

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• Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

  Hjelt, K., Sopanen, M., Lipsanen, H. & Tuomi, T., 1993, USA, s. 27-32, (Materials Research Society Symposium Proceedings; nro 30).

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• Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy

  Sopanen, M., Koljonen, T. & Tuomi, T., 1993, Espoo, s. 34-37, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C148).

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• The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer

  Hjelt, K., Sopanen, M., Lipsanen, H., Tuomi, T. & Hasenöhrl, S., 1993, Espoo, s. 26-29, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C148).

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• 1992

  Fabrication of InGaAsP/InP distributed feedback lasers

  Sopanen, M., Koljonen, T. & Tuomi, T., 1992, Espoo, s. 30-31, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C139).

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• Inhomogeneity of LPE-InGaAs layers grown by supercooling technique

  Sopanen, M. & Tuomi, T., 1992, Espoo, s. 29-29, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C139).

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• Liquid phase epitaxial (LPE) technique

  Lipsanen, H., Sopanen, M., Hjelt, K., Koljonen, T., Prieur, E., Tuominen, M., Yli-Juuti, E., Kokkinen, H. & Tuomi, T., 1992, Espoo, s. 21-23, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C139).

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• Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2

  Hasenöhrl, S., Hjelt, K., Lipsanen, H., Sopanen, M. & Tuomi, T., 1992, Espoo, s. 14-16, (Optoelectronics Laboratory, Helsinki University of Technology; nro TKK-F-C139).

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