Engineering
Heterostructures
100%
Indium Gallium Arsenide
100%
Efficiency Droop
50%
Temperature Dependence
50%
Large Area
50%
Light-Emitting Diode
35%
Compound Semiconductor
32%
Lower Temperature
25%
Charge Transport
25%
Carrier Density
25%
Measurement
25%
Gallium Arsenide
25%
Quantum Well
25%
Internal Quantum Efficiency
14%
Yields
14%
Scaling
14%
Requirements
7%
Fabrication
7%
Density
7%
Characteristics
7%
Performed Measurement
7%
Performance
7%
High Quality
7%
Electric Potential
7%
Development
7%
Cooling Capacity
7%
Physics
Area
100%
Light Emitting Diode
65%
Cooling
58%
Temperature Dependence
50%
Information
44%
Semiconductor
42%
Quantum Wells
25%
Temperature
25%
Technology
24%
Performance
17%
Growth
10%
Failure
10%
Wafer
7%
Electric Potential
7%
Material Science
Indium Gallium Arsenide
50%
Heterojunction
50%
Light-Emitting Diode
30%
Density
20%
Devices
20%
Electrical Property
10%
III-V Semiconductor
10%
