Gaussian approximation potential (GAP) for silicon [1]. It has been fitted with QUIP/GAP [1,2] by recomputing the Si database of Bartók et al. [3] at the PW91 level of theory [4] using the VASP code [5,6,7]. This potential uses 2-body (distance_2b) and 3-body (angle_3b) descriptors [5] plus SOAP-type descriptors (soap_turbo) [9,10], as implemented in the TurboGAP code [11]. The files can be used both with QUIP/GAP (compiled with the soap_turbo libraries) and TurboGAP. More details will follow in a scientific
publication in due course (bibligraphical data will be added as it becomes available).


A.P. Bartók, M.C. Payne, R. Kondor, and G. Csányi. Phys. Rev. Lett. 104, 136403 (2010).LibAtoms: https://libatoms.github.ioA.P. Bartók, J. Kermode, N. Bernstein, and G. Csányi. Phys. Rev. X 8, 041048 (2018).J.P. Perdew and Y. Wang. Phys. Rev. B 45, 13244 (1992).V.L. Deringer and G. Csányi. Phys. Rev. B 95, 094203 (2017).VASP: http://vasp.atG. Kresse and J. Furthmüller. Phys. Rev. B 54, 11169 (1996).T. Bucko, S. Lebègue, T. Gould, and J.G. Ángyán, J. Phys.: Condens. Matter 28, 045201 (2016).A.P. Bartók, R. Kondor, and G. Csányi. Phys. Rev. B 87, 184115 (2013).M.A. Caro. Phys. Rev. B 100, 024112 (2019).TurboGAP:
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