Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

A. Zubiaga, Filip Tuomisto, F. Plazaola, K. Saarinen, J.A. Garcia, J.F. Rommeluere, J. Zuniga-Perez, V. Munoz-San Jose

Research output: Contribution to journalArticleScientificpeer-review

56 Citations (Scopus)
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Abstract

Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.
Original languageEnglish
Article number042103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • MOCVD
  • Zn vacancy
  • ZnO

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