Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

A. Zubiaga; Filip Tuomisto; F. Plazaola; K. Saarinen; J.A. Garcia; J.F. Rommeluere; J. Zuniga-Perez; V. Munoz-San Jose

doi:10.1063/1.1855412

Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

A. Zubiaga, Filip Tuomisto, F. Plazaola, K. Saarinen, J.A. Garcia, J.F. Rommeluere, J. Zuniga-Perez, V. Munoz-San Jose

Department of Applied Physics

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Abstract

Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.

Original language	English
Article number	042103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.1855412
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

MOCVD
Zn vacancy
ZnO

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title = "Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness",

abstract = "Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.",

keywords = "MOCVD, Zn vacancy, ZnO, MOCVD, Zn vacancy, ZnO, MOCVD, Zn vacancy, ZnO",

author = "A. Zubiaga and Filip Tuomisto and F. Plazaola and K. Saarinen and J.A. Garcia and J.F. Rommeluere and J. Zuniga-Perez and {Munoz-San Jose}, V.",

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T1 - Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

AU - Zubiaga, A.

AU - Tuomisto, Filip

AU - Plazaola, F.

AU - Saarinen, K.

AU - Garcia, J.A.

AU - Rommeluere, J.F.

AU - Zuniga-Perez, J.

AU - Munoz-San Jose, V.

PY - 2005

Y1 - 2005

N2 - Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.

AB - Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.

KW - MOCVD

KW - Zn vacancy

KW - ZnO

KW - MOCVD

KW - Zn vacancy

KW - ZnO

KW - MOCVD

KW - Zn vacancy

KW - ZnO

U2 - 10.1063/1.1855412

DO - 10.1063/1.1855412

M3 - Article

SN - 0003-6951

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SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042103

ER -

Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

Abstract

Keywords

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