Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures

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Abstract

Demonstrating and harnessing electroluminescent cooling at technologically viable cooling powers requires the ability to routinely fabricate large area high quality light-emitting diodes (LEDs). Detailed information on the performance and yield of relevant large area devices is not available, however. Here, we report extensive information on the yield and related large area scaling of InP/InGaAs LEDs and discuss the origin of the failure mechanisms based on lock-in thermographic imaging. The studied LEDs were fabricated as mesa structures of various sizes on epistructures grown at five different facilities specialized in the growth of III-V compound semiconductors. While the smaller mesas generally showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited unusually large leakage current densities. The provided information is critical for the development and design of the optical cooling technologies relying on large area devices.

Details

Original languageEnglish
Article number083105
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Volume116
Issue number8
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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