X-ray topography study of epitaxial laterally overgrowth of GaN on sapphire

P.J. McNally, T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine, M. O´Hare, A.N. Danilewsky

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHamburg
    Publication statusPublished - 1999
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB-DESY Jahresbericht 1998 Annual Report I
    PublisherHamburger Synchrotronstrahlungslabor HASYLAND


    • gallium nitride
    • overgrown
    • synchrotron
    • x-ray topography

    Cite this