Wideband superconducting nanotube electrometer

Pasi Häkkinen; Aurélien Fay; Dmitry Golubev; Pasi Lähteenmäki; Pertti Hakonen

doi:10.1063/1.4926400

Wideband superconducting nanotube electrometer

Pasi Häkkinen, Aurélien Fay, Dmitry Golubev, Pasi Lähteenmäki, Pertti Hakonen

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Abstract

We have investigated the microwave response of nanotube Josephson junctions at 600–900 MHz at microwave powers corresponding to currents from 0 to 2 × I C in the junction. Compared with theoretical modeling, the response of the junctions corresponds well to the lumped element model of resistively and capacitively shunted junction. We demonstrate the operation of these superconducting FETs as charge detectors at high frequencies without any matching circuits. Gate-voltage-induced charge Q G modifies the critical current I C, which changes the effective impedance of the junction under microwave irradiation. This change, dependent on the transfer characteristics dI C/dQ G, modifies the reflected signal and it can be used for wide band electrometry. We measure a sensitivity of 3.1×10−5 e/Hz√ from a sample which has a maximum switching current of 2.6 nA.

Original language	English
Article number	012601
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	1
DOIs	https://doi.org/10.1063/1.4926400
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

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OtaNano
Rissanen, A. (Manager)
Aalto University
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Savin, A. (Manager) & Rissanen, A. (Other)
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@article{4b334b4556fe4f478ff9d769e9b76813,

title = "Wideband superconducting nanotube electrometer",

abstract = "We have investigated the microwave response of nanotube Josephson junctions at 600–900 MHz at microwave powers corresponding to currents from 0 to 2 × I C in the junction. Compared with theoretical modeling, the response of the junctions corresponds well to the lumped element model of resistively and capacitively shunted junction. We demonstrate the operation of these superconducting FETs as charge detectors at high frequencies without any matching circuits. Gate-voltage-induced charge Q G modifies the critical current I C, which changes the effective impedance of the junction under microwave irradiation. This change, dependent on the transfer characteristics dI C/dQ G, modifies the reflected signal and it can be used for wide band electrometry. We measure a sensitivity of 3.1×10−5 e/Hz√ from a sample which has a maximum switching current of 2.6 nA.",

author = "Pasi H{\"a}kkinen and Aur{\'e}lien Fay and Dmitry Golubev and Pasi L{\"a}hteenm{\"a}ki and Pertti Hakonen",

note = "VK: Low Temperature Laboratory",

year = "2015",

doi = "10.1063/1.4926400",

language = "English",

volume = "107",

pages = "1--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Wideband superconducting nanotube electrometer

AU - Häkkinen, Pasi

AU - Fay, Aurélien

AU - Golubev, Dmitry

AU - Lähteenmäki, Pasi

AU - Hakonen, Pertti

N1 - VK: Low Temperature Laboratory

PY - 2015

Y1 - 2015

N2 - We have investigated the microwave response of nanotube Josephson junctions at 600–900 MHz at microwave powers corresponding to currents from 0 to 2 × I C in the junction. Compared with theoretical modeling, the response of the junctions corresponds well to the lumped element model of resistively and capacitively shunted junction. We demonstrate the operation of these superconducting FETs as charge detectors at high frequencies without any matching circuits. Gate-voltage-induced charge Q G modifies the critical current I C, which changes the effective impedance of the junction under microwave irradiation. This change, dependent on the transfer characteristics dI C/dQ G, modifies the reflected signal and it can be used for wide band electrometry. We measure a sensitivity of 3.1×10−5 e/Hz√ from a sample which has a maximum switching current of 2.6 nA.

AB - We have investigated the microwave response of nanotube Josephson junctions at 600–900 MHz at microwave powers corresponding to currents from 0 to 2 × I C in the junction. Compared with theoretical modeling, the response of the junctions corresponds well to the lumped element model of resistively and capacitively shunted junction. We demonstrate the operation of these superconducting FETs as charge detectors at high frequencies without any matching circuits. Gate-voltage-induced charge Q G modifies the critical current I C, which changes the effective impedance of the junction under microwave irradiation. This change, dependent on the transfer characteristics dI C/dQ G, modifies the reflected signal and it can be used for wide band electrometry. We measure a sensitivity of 3.1×10−5 e/Hz√ from a sample which has a maximum switching current of 2.6 nA.

U2 - 10.1063/1.4926400

DO - 10.1063/1.4926400

M3 - Article

SN - 0003-6951

VL - 107

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012601

ER -

Wideband superconducting nanotube electrometer

Abstract

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