White beam synchrotron x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN

W.M. Chen; P.J. McNally; K. Jacobs; T. Tuomi; A.N. Danilewsky; D. Lowney; J. Kanatharana; L. Knuuttila; J. Riikonen

White beam synchrotron x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN

W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen

Research output: Working paper › Professional

Original language	English
Pages	80
Publication status	Published - 2002
MoE publication type	D4 Published development or research report or study

Publication series

Name	HASYLAB Users' Meeting 2002, Hamburg, Germany, January 25, 2002

Keywords

semiconductors
synchrotron x-ray topography

Cite this

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title = "White beam synchrotron x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN",

keywords = "semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography",

author = "W.M. Chen and P.J. McNally and K. Jacobs and T. Tuomi and A.N. Danilewsky and D. Lowney and J. Kanatharana and L. Knuuttila and J. Riikonen",

year = "2002",

language = "English",

series = "HASYLAB Users' Meeting 2002, Hamburg, Germany, January 25, 2002",

pages = "80",

type = "WorkingPaper",

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TY - UNPB

T1 - White beam synchrotron x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN

AU - Chen, W.M.

AU - McNally, P.J.

AU - Jacobs, K.

AU - Tuomi, T.

AU - Danilewsky, A.N.

AU - Lowney, D.

AU - Kanatharana, J.

AU - Knuuttila, L.

AU - Riikonen, J.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

M3 - Working paper

T3 - HASYLAB Users' Meeting 2002, Hamburg, Germany, January 25, 2002

SP - 80

BT - White beam synchrotron x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN

ER -