Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

T. Hakkarainen, J. Toivonen, M. Sopanen, H. Lipsanen

    Research output: Working paperProfessional

    Original languageEnglish
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    Name11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002

    Keywords

    • compound ssemiconductor
    • diluted nitride
    • metal-organic vapor phase epitaxy

    Cite this

    Hakkarainen, T., Toivonen, J., Sopanen, M., & Lipsanen, H. (2002). Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs. (11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002).