Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

T. Hakkarainen; J. Toivonen; M. Sopanen; H. Lipsanen

Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

T. Hakkarainen, J. Toivonen, M. Sopanen, H. Lipsanen

Research output: Working paper › Professional

Original language	English
Publication status	Published - 2002
MoE publication type	D4 Published development or research report or study

Publication series

Name	11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002

Keywords

compound ssemiconductor
diluted nitride
metal-organic vapor phase epitaxy

Cite this

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title = "Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs",

keywords = "compound ssemiconductor, diluted nitride, metal-organic vapor phase epitaxy, compound ssemiconductor, diluted nitride, metal-organic vapor phase epitaxy, compound ssemiconductor, diluted nitride, metal-organic vapor phase epitaxy",

author = "T. Hakkarainen and J. Toivonen and M. Sopanen and H. Lipsanen",

year = "2002",

language = "English",

series = "11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002",

type = "WorkingPaper",

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TY - UNPB

T1 - Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

AU - Hakkarainen, T.

AU - Toivonen, J.

AU - Sopanen, M.

AU - Lipsanen, H.

PY - 2002

Y1 - 2002

KW - compound ssemiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

KW - compound ssemiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

KW - compound ssemiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

M3 - Working paper

T3 - 11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002

BT - Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

ER -