Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • Optogan GmbH


Original languageEnglish
Pages (from-to)188-191
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 15 Jan 2011
MoE publication typeA1 Journal article-refereed

    Research areas

  • Metalorganic vapor phase Epitaxy, Pendeo Epitaxy, Voids, Gallium nitride, patterning, Nitrides

ID: 965730