Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Muhammad Ali, A.E. Romanov, Sami Suihkonen, Olli Svensk, Pekka T. Törmä, Markku Sopanen, Harri Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)
Original languageEnglish
Pages (from-to)188-191
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 15 Jan 2011
MoE publication typeA1 Journal article-refereed


  • Metalorganic vapor phase Epitaxy, Pendeo Epitaxy, Voids, Gallium nitride, patterning, Nitrides

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