Visualisation and finite element modelling of strain fields in silicon due to integrated circuit metallisation

M. "O'Hare", P.J. McNally, D. Lowney, Turkka Tuomi, R. Rantamäki, A.N. Danilewsky

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publication3rd Int. Conf. on Materials for Microelectronics (MFM2000), Dublin Castle, Ireland, 16-17 October, 2000
    Pages89-92
    Publication statusPublished - 2000
    MoE publication typeA4 Article in a conference publication

    Keywords

    • integrated circuits
    • silicon
    • strain fields
    • synchrotron x-ray topography

    Cite this