Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

Lauri Riuttanen*, Pyry Kivisaari, Olli Svensk, Teemu Vasara, Pertti Myllys, Jani Oksanen, Sami Suihkonen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
PublisherSPIE
Volume9363
ISBN (Print)9781628414530
DOIs
Publication statusPublished - 2015
MoE publication typeA4 Conference publication
EventGallium Nitride Materials and Devices - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015
Conference number: 10

Conference

ConferenceGallium Nitride Materials and Devices
Country/TerritoryUnited States
CitySan Francisco
Period09/02/201512/02/2015

Keywords

  • diffiusion injection
  • III-nitrides
  • light-emitting diodes

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