Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

O.-P. Saira, A. Kemppinen, Ville Maisi, J.P. Pekola

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033μm−3 and γ<1.6×10−7 from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
Original languageEnglish
Article number012504
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B
Volume85
Issue number1
DOIs
Publication statusPublished - 20 Jan 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • quasiparticle density
  • single-electron transistor

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