Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

O.-P. Saira, A. Kemppinen, Ville Maisi, J.P. Pekola

Research output: Contribution to journalArticleScientificpeer-review

82 Citations (Scopus)
126 Downloads (Pure)


The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033μm−3 and γ<1.6×10−7 from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
Original languageEnglish
Article number012504
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B
Issue number1
Publication statusPublished - 20 Jan 2012
MoE publication typeA1 Journal article-refereed


  • quasiparticle density
  • single-electron transistor


Dive into the research topics of 'Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor'. Together they form a unique fingerprint.

Cite this