Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy

Research output: Working paperProfessional

Researchers

Research units

Details

Original languageEnglish
Publication statusPublished - 2002
MoE publication typeD4 Published development or research report or study

Publication series

Name14th International Conference on Idium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002

    Research areas

  • ciluted nitride, compound semiconductor, metal-organic vapor phase epitaxy

ID: 4129425