Vacancy-type defect distributions of (11)B-, (14)N and (27)Al-implanted 4H-SiC studied by positron annihilation spectroscopy

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Original languageEnglish
Pages (from-to)641-644
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • Defects, Ion implantation, Positron annihilation spectroscopy

ID: 3479231