Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy

J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen, M. Sopanen, H. Lipsanen

    Research output: Working paperProfessional

    Original languageEnglish
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    Name14th International Conference on Idium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002

    Keywords

    • ciluted nitride
    • compound semiconductor
    • metal-organic vapor phase epitaxy

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