Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopy

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Original languageEnglish
Pages (from-to)664-667
JournalPhysica B
Volume308-310
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

    Research areas

  • implantation, positron annihilation, vacancies

ID: 3589307