Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopy

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • J. Slotte
  • K. Saarinen
  • A.Yu. Kuznetsov
  • A. Hallén

Research units

Details

Original languageEnglish
Pages (from-to)664-667
JournalPhysica B
Volume308-310
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

    Research areas

  • implantation, positron annihilation, vacancies

ID: 3589307