Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopy

J. Slotte, K. Saarinen, A.Yu. Kuznetsov, A. Hallén

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)664-667
JournalPhysica B
Volume308-310
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • implantation
  • positron annihilation
  • vacancies

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