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Vacancy-type defect distributions of (11)B-, (14)N and (27)Al-implanted 4H-SiC studied by positron annihilation spectroscopy

  • M.S. Janson
  • , J. Slotte
  • , A.Yu Kuznetsov
  • , K. Saarinen
  • , A. Hallén

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)641-644
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • Defects, Ion implantation, Positron annihilation spectroscopy

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