Vacancy related defect distributions in B-11, N-14 and Al-27 implanted 4H-SiC: The role of channeling

M.S. Janson, Jonatan Slotte, A.Yu Kuznetsov, Kimmo Saarinen, A. Hallen

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{040a2b014fe54285bdf316fdb8dc5605,

title = "Vacancy related defect distributions in B-11, N-14 and Al-27 implanted 4H-SiC: The role of channeling",

keywords = "positron, positron, positron",

author = "M.S. Janson and Jonatan Slotte and A.Yu Kuznetsov and Kimmo Saarinen and A. Hallen",

year = "2004",

language = "English",

volume = "95",

pages = "57--63",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Vacancy related defect distributions in B-11, N-14 and Al-27 implanted 4H-SiC: The role of channeling

AU - Janson, M.S.

AU - Slotte, Jonatan

AU - Kuznetsov, A.Yu

AU - Saarinen, Kimmo

AU - Hallen, A.

PY - 2004

Y1 - 2004

KW - positron

M3 - Article

SN - 0021-8979

VL - 95

SP - 57

EP - 63

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -