Vacancy-related color centers in two-dimensional silicon carbide monolayers

M. Mohseni, I. Abdolhosseini Sarsari, S. Karbasizadeh, Péter Udvarhelyi, Q. Hassanzada, T. Ala-Nissila, A. Gali

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Basic vacancy defects in two-dimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well as their potential in quantum technologies. In particular, the characteristic hyperfine tensors and optical excited states of carbon-vacancy, silicon-vacancy, and carbon antisite-vacancy pair defects in 2D-SiC are determined that are the key fingerprints of these defects that may be observed in electron paramagnetic resonance and photoluminescence experiments, respectively. Besides the fundamental characterization of the most basic native defects, we show that the negatively charged carbon antisite-vacancy defect is a promising candidate for realizing a near-infrared single-photon quantum emitter with a spin doublet ground state, where the negative charge state may be provided by nitrogen doping of 2D-SiC. We find that the neutral carbon vacancy with a spin-triplet ground state might be used for quantum sensing with a broad emission in the visible.

Original languageEnglish
Article number056201
Pages (from-to)1-11
Number of pages11
JournalPhysical Review Materials
Issue number5
Publication statusPublished - May 2024
MoE publication typeA1 Journal article-refereed


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