Vacancy in DX Centers in Si and Sn doped AlGaAs

J. Mäkinen, T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, V-M. Airaksinen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication17th International Conference on Defects in Semiconductors, Gmunden, Austria, July 18-23, 1993
Pages261-262
Publication statusPublished - 1993
MoE publication typeA4 Article in a conference publication

Keywords

  • AlGaAs
  • DX-center
  • vacancy

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