Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy

M. Rummukainen, J. Slotte, K. Saarinen, H.H. Radamson, J. Hållstedt, A.Yu. Kuznetsov

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)
Original languageEnglish
JournalPhysical Review B
Volume73
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Keywords

  • defect
  • positron annihilation
  • semiconductor
  • SiGe

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