Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy

M. Rummukainen; J. Slotte; K. Saarinen; H.H. Radamson; J. Hållstedt; A.Yu. Kuznetsov

Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy

M. Rummukainen, J. Slotte, K. Saarinen, H.H. Radamson, J. Hållstedt, A.Yu. Kuznetsov

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Original language	English
Journal	Physical Review B
Volume	73
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed

Keywords

defect
positron annihilation
semiconductor
SiGe

Cite this

@article{9dd0ad0fba9e48e9af21fc8a9e5fb8e6,

title = "Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy",

keywords = "defect, positron annihilation, semiconductor, SiGe, defect, positron annihilation, semiconductor, SiGe, defect, positron annihilation, semiconductor, SiGe",

author = "M. Rummukainen and J. Slotte and K. Saarinen and H.H. Radamson and J. H{\aa}llstedt and A.Yu. Kuznetsov",

year = "2006",

language = "English",

volume = "73",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "2469-9950",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy

AU - Rummukainen, M.

AU - Slotte, J.

AU - Saarinen, K.

AU - Radamson, H.H.

AU - Hållstedt, J.

AU - Kuznetsov, A.Yu.

PY - 2006

Y1 - 2006

KW - defect

KW - positron annihilation

KW - semiconductor

KW - SiGe

KW - defect

KW - positron annihilation

KW - semiconductor

KW - SiGe

KW - defect

KW - positron annihilation

KW - semiconductor

KW - SiGe

UR - http://link.aps.org/abstract/PRB/v73/e165209

M3 - Article

VL - 73

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

ER -

Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy

Keywords

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Cite this