Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy

Mikko Rummukainen, Ilja Makkonen, Ville Ranki, Martti Puska, Kimmo Saarinen, H.-J.L. Gossmann

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Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1–2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400–500 K convert the defects to larger complexes where the open volume is neighbored by 2–3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.
Original languageEnglish
Article number165501
Pages (from-to)1-4
Number of pages4
JournalPhysical Review Letters
Issue number16
Publication statusPublished - 15 Apr 2005
MoE publication typeA1 Journal article-refereed


  • positron


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