Vacancy generation in liquid phase epitaxy of Si

A. La Magna, V. Privitera, G. Fortunato, M. Cuscuna, B.G. Svensson, E. Monakov, K. Kuitunen, J. Slotte, Filip Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)
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Abstract

Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.
Original languageEnglish
Article number235201
Pages (from-to)1-6
Number of pages6
JournalPhysical Review B
Volume75
Issue number23
DOIs
Publication statusPublished - Jun 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • laser annealing
  • positron annihilation
  • silicon
  • vacancies

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