Vacancy Engineering by He Induced Nanovoids in Crystalline Si

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Original languageEnglish
Article number015005
Pages (from-to)1-4
Number of pages4
JournalSemiconductor Science and Technology
Volume24
Issue number1
Publication statusPublished - 5 Dec 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • boron, He implantation, positron annihilation, silicon, vacancy cluster

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