Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of California at Santa Barbara

Details

Original languageEnglish
Pages (from-to)S401-S404
Number of pages4
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume6
Issue numberSupplement 2
Publication statusPublished - Jun 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • InN, MBE, positron, vacancy

ID: 3585424