Vacancy defects in O-doped GaN grown by molecular beam epitaxy: The role of growth polarity and stoichiometry

M. Rummukainen, J. Oila, A. Laakso, K. Saarinen, A.J. Ptak, T.H. Myers

Research output: Contribution to journalArticleScientificpeer-review

23 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume84
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Keywords

  • positron

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