Vacancy defects in O-doped GaN grown by molecular beam epitaxy: The role of growth polarity and stoichiometry

M. Rummukainen, J. Oila, A. Laakso, K. Saarinen, A.J. Ptak, T.H. Myers

Research output: Contribution to journalArticleScientificpeer-review

23 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed


  • positron

Cite this