Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen, J. Mäkinen, P. Hautojärvi, S. Kuisma, T. Laine, C. Corbel, C. LeBerre

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)501-503
JournalMaterials Science Forum
Volume175-178
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • GaAs
  • positron

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