Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen, J. Mäkinen, P. Hautojärvi, S. Kuisma, T. Laine, C. Corbel, C. LeBerre

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publicationThe 10th International Conference on Positron Annihilation, Beijing, China, 1994
Publication statusPublished - 1994
MoE publication typeA4 Article in a conference publication

Keywords

  • III-V compound semiconductors
  • positron annihilation
  • vacancy

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