Abstract
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.
Original language | English |
---|---|
Article number | 064102 |
Pages (from-to) | 1-5 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 86 |
Issue number | 6 |
DOIs | |
Publication status | Published - Aug 2012 |
MoE publication type | A1 Journal article-refereed |
Keywords
- CGS
- CIGS
- CIS
- positron