Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Esa Korhonen; K. Kuitunen; F. Tuomisto; A. Urbaniak; M. Igalson; J. Larsen; L. Gütay; S. Siebentritt

doi:10.1103/PhysRevB.86.064102

Vacancy defects in epitaxial thin film CuGaSe₂ and CuInSe₂

Esa Korhonen, K. Kuitunen, F. Tuomisto, A. Urbaniak, M. Igalson, J. Larsen, L. Gütay, S. Siebentritt

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

Original language	English
Article number	064102
Pages (from-to)	1-5
Number of pages	5
Journal	Physical Review B
Volume	86
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.86.064102
Publication status	Published - Aug 2012
MoE publication type	A1 Journal article-refereed

Keywords

CGS
CIGS
CIS
positron

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10.1103/PhysRevB.86.064102

PhysRevB.86.064102Final published version, 340 KB

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title = "Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2",

abstract = "Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.",

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AU - Korhonen, Esa

AU - Kuitunen, K.

AU - Tuomisto, F.

AU - Urbaniak, A.

AU - Igalson, M.

AU - Larsen, J.

AU - Gütay, L.

AU - Siebentritt, S.

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AB - Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

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KW - CIS

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Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

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Keywords

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Vacancy defects in epitaxial thin film CuGaSe₂ and CuInSe₂