Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Esa Korhonen, K. Kuitunen, F. Tuomisto, A. Urbaniak, M. Igalson, J. Larsen, L. Gütay, S. Siebentritt

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)
156 Downloads (Pure)


Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.
Original languageEnglish
Article number064102
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Issue number6
Publication statusPublished - Aug 2012
MoE publication typeA1 Journal article-refereed


  • CGS
  • CIGS
  • CIS
  • positron


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