Vacancy defects in bulk ammonothermal GaN crystals

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Ammono S.A.

Details

Original languageEnglish
Pages (from-to)2620-2623
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number18
Publication statusPublished - 1 Sep 2010
MoE publication typeA1 Journal article-refereed

    Research areas

  • ammonothermal, GaN, positron, vacancy

ID: 728844