Vacancy defects as compensating centers in Mg-doped GaN

S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, H.P. Gislason

Research output: Contribution to journal › Article › Scientific › peer-review

102 Citations (Scopus)

Keywords

@article{71386e307c3445f0912965035e5edded,

title = "Vacancy defects as compensating centers in Mg-doped GaN",

keywords = "GaN, positron, GaN, positron, GaN, positron",

author = "S. Hautakangas and J. Oila and M. Alatalo and K. Saarinen and L. Liszkay and D. Seghier and H.P. Gislason",

year = "2003",

language = "English",

volume = "90",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Vacancy defects as compensating centers in Mg-doped GaN

AU - Hautakangas, S.

AU - Oila, J.

AU - Alatalo, M.

AU - Saarinen, K.

AU - Liszkay, L.

AU - Seghier, D.

AU - Gislason, H.P.

PY - 2003

Y1 - 2003

KW - GaN

KW - positron

KW - GaN

KW - positron

KW - GaN

KW - positron

M3 - Article

VL - 90

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

ER -