Vacancy defects as compensating centers in Mg-doped GaN

S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, H.P. Gislason

Research output: Contribution to journalArticleScientificpeer-review

102 Citations (Scopus)
Original languageEnglish
JournalPhysical Review Letters
Volume90
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • positron

Cite this