Vacancy defect formation in PA-MBE grown C-doped InN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Technische Universität München
  • University of California at Santa Barbara
  • Fraunhofer Institute for Applied Solid State Physics

Details

Original languageEnglish
Pages (from-to)530-532
Number of pages3
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume11
Issue number3-4
Publication statusPublished - Apr 2014
MoE publication typeA1 Journal article-refereed

    Research areas

  • InN, positron, vacancy

ID: 777369