Vacancy defect distributions in bulk ZnO crystals

Filip Tuomisto, D.C. Look

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

13 Citations (Scopus)

Abstract

We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electronirradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancy defects and their concentrations in these materials.
Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices II
EditorsFH Teherani, CW Litton
Pages1-11
Number of pages11
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventConference on Zinc Oxide Materials and Devices - San Jose, United States
Duration: 21 Jan 200724 Jan 2007
Conference number: II

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume6474
ISSN (Print)0277-786X

Conference

ConferenceConference on Zinc Oxide Materials and Devices
Country/TerritoryUnited States
CitySan Jose
Period21/01/200724/01/2007

Keywords

  • positron

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