Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

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Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy. / Tuomisto, F.; Paskova, T.; Figge, S.; Hommel, D.; Monemar, B.

In: Journal of Crystal Growth, Vol. 300, No. 1, 01.03.2007, p. 251-253.

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Tuomisto, F. ; Paskova, T. ; Figge, S. ; Hommel, D. ; Monemar, B. / Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy. In: Journal of Crystal Growth. 2007 ; Vol. 300, No. 1. pp. 251-253.

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@article{1aaddafc83ed40839905cfd23fab32e5,
title = "Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy",
keywords = "GaN, HVPE, non-polar, positron, vacancy, GaN, HVPE, non-polar, positron, vacancy, GaN, HVPE, non-polar, positron, vacancy",
author = "F. Tuomisto and T. Paskova and S. Figge and D. Hommel and B. Monemar",
year = "2007",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2006.11.040",
language = "English",
volume = "300",
pages = "251--253",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

AU - Tuomisto, F.

AU - Paskova, T.

AU - Figge, S.

AU - Hommel, D.

AU - Monemar, B.

PY - 2007/3/1

Y1 - 2007/3/1

KW - GaN

KW - HVPE

KW - non-polar

KW - positron

KW - vacancy

KW - GaN

KW - HVPE

KW - non-polar

KW - positron

KW - vacancy

KW - GaN

KW - HVPE

KW - non-polar

KW - positron

KW - vacancy

U2 - 10.1016/j.jcrysgro.2006.11.040

DO - 10.1016/j.jcrysgro.2006.11.040

M3 - Article

VL - 300

SP - 251

EP - 253

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

ID: 3546270