Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of Bremen
  • Linköping University

Details

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalJournal of Crystal Growth
Volume300
Issue number1
Publication statusPublished - 1 Mar 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaN, HVPE, non-polar, positron, vacancy

ID: 3546270